LHF00L28
1.2.5 AC Characteristics - Write Operations (1), (2)
V CC =2.7V-3.6V, T A =-40 ° C to +85 ° C
20
WP#/ACC=V ACCH
Symbol
t AVAV
t PHWL (t PHEL )
t ELWL (t WLEL )
t WLWH (t ELEH )
t DVWH (t DVEH )
t AVWH (t AVEH )
t WHEH (t EHWH )
t WHDX (t EHDX )
t WHAX (t EHAX )
t WHWL (t EHEL )
t SHWH (t SHEH )
t WHGL (t EHGL )
Parameter
Write Cycle Time
RST# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
WP#/ACC High Setup to WE# (CE#) WP#/ACC=V IH
Going High
Write Recovery before Read
Notes
3
4
7
7
5
3
Min.
70
150
0
50
40
50
0
0
0
20
0
200
30
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t QVSL
t WHR0 (t EHR0 )
t WHRL (t EHRL )
WP#/ACC High Hold from Valid SRD, RY/BY# High Z
WE# (CE#) High to SR.7 Going "0"
WE# (CE#) High to RY/BY# Going Low
3
3, 6
3
0
t AVQV
+50
100
ns
ns
ns
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, program and OTP program
operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations.
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t WP ) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
CE# or WE# (whichever goes high first). Hence, t WP =t WLWH =t ELEH =t WLEH =t ELWH .
5. Write pulse width high (t WPH ) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
edge of CE# or WE# (whichever goes low last). Hence, t WPH =t WHWL =t EHEL =t WHEL =t EHWL .
6. t WHR0 (t EHR0 ) after the Read Query or Read Identifier Codes/OTP command=t AVQV +100ns.
7. Refer to Table 4 for valid address and data for block erase, full chip erase, program, OTP program or lock bit
configuration.
Rev. 2.45
相关PDF资料
LPM409 CHASSIS STNRD 4SLOT CHASSIS W/INPUT LEAD
LS15RB1201J04 POE SPLITTER 10.8W 12V @0.9A
LT1932ES6#TRMPBF IC LED DRIVR WHITE BCKLGT TSOT-6
LT1937ES5#TRMPBF IC LED DRIVR WHITE BCKLGT TSOT-5
LT3003EMSE#TRPBF IC LED DRIVER BALLASTER 10-MSOP
LT3465AES6#TRMPBF IC LED DRIVR WHITE BCKLGT TSOT-6
LT3466EDD-1#PBF IC LED DRIVR WHITE BCKLGT 10-DFN
LT3466EDD#PBF IC LED DRIVR WHITE BCKLGT 10-DFN
相关代理商/技术参数
LHF00L29 功能描述:闪存 16Mb 3VBottom Boot Single Supply RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
LHF00L30 功能描述:闪存 16Mb 3VTop Boot Dual Supply RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
LHF00L31 功能描述:闪存 16Mb 3VBottom Boot Dual Supply RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
LHF00L47 制造商:Sharp Microelectronics Corporation 功能描述:8MB NOR FLASH FOR CISCO ROHS COMPLIANT - Trays
LHF-03-SA2-X02 制造商:Adam Technologies Inc 功能描述:3 Position Board Mount Header 5 mm Pitch
LHF-03-SB1-V2-EU 制造商:Adam Technologies Inc 功能描述:
LHF04C01 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:4M Flash File Memory
LHF04C10 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:4Mbit Flash Memory